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ZMT32 Magnetic Field Angle Sensor
Description
The ZMT32 is a thin film permalloy magnetic field sensor, which contains two galvanic isolated Wheatstone Bridges for high precision angle measurement applications under low field conditions. This angle sensor is based on the anisotropic magnetoresistive effect (AMR). The two internal (VCC1, VCC2) bridges enclose a relative sensitive angle of 45 degrees. The input field is a rotating magnetic field in the chip plane (parallel to the surface of package). This rotating field will make available two independent sinusoidal output signals with the following relationship The precise ZMT32 works with low field applications (Hrot= 8 to 25kA/m), much lower than similar devices. The ultimate output signal quality depends on the external magnetic material and on the mechanical realization.
The ZMT32 is a passive part and the ArcTangent interpolation needs external signal processing. Typical areas of application are angle and speed measurement.
VO 2 Sin(2 ) = = Tan(2 ) VO1 Cos (2 )
where = angle between sensor axis and field direction
Features
* * * * contactless angle measurement up to 180 flexible measuring solutions for moved systems stable operation over long time high temperature range up to +160C
Applications
* * * * * angle and angular velocity measuring systems absolute angle and angle change automotive electronic (steering, control, pedal positioning, etc throttle
contactless rotary switches and potentiometer automatic adjustment
-VO1(cos) -VO2 (sin) VCC2(bridge 2) VCC1 (bridge 1)
1 2 3 4
8 7 6 5
GND (bridge 1) GND2 (bridge 2) +VO2 (sin) +VO1 (cos)
Ordering Information
Device
ZMT32TA
Reel size (Inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Device marking
ZETEX ZMT32
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ZMT32
Absolute maximum ratings
Parameter Supply Voltages Single Bridge Current Operating Temperature Range Storage Temperature Range Symbol Vcc1 and Vcc2 Icc1 or Icc2 TA Tstg Limit 10 4 -40 to +160 -55 to +175 Unit V mA C C
Recommended operating conditions
Symbol Vcc1, Vcc2 Hrot Parameter Supply Voltages Applied Magnetic Field Strength 8 Min Typ 5 25 Max 8.5 Unit V kA/m
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Electrical characteristics
General test conditions (unless otherwise noted) TA= +235oC, VCC1=VCC2 = +5V, HROT=25kA/m(), k=100*(VPO1/VPO2) with VCC1=VCC2 PARAMETER Sensitivities (zero crossing) Peak Output Voltages VPO1 or VPO2 (sinusoidal signals) k Amplitude bridge matching Temperature coefficient of TCk amplitude bridge matching RB1 or RB2 TCRBB VO1/VCC1A or Peak to peak output swing VO2/VCC2A TCVOB VOFF1/VCC1A or VOFF2/VCC2 TCVOFFB A HA Iiso1-2
A
SYMBOL S1 or S2
CONDITIONS
1=135, 2=0
MIN 40 99.77
TYP (*) 0.35 50 100
MAX 60 100.23 +0.008 3040
UNIT mV/V/deg mV % %/K %/K
TA = -40 to +160C TA = -40C no HROT TA = 23C TA = +160C
-0.008 2017 2500 3345 +0.28 +0.32 20 20 -0.32 19.2 16 6.7 16 -0.35 3000
Bridge resistances TC of Bridge Resistances
3600 5114 +0.36 30.4 24 13.4 24 -0.28 +1.25 +1.55
TA = -40C TA = 23C TA = +160C HROT = 8 kA/m() TA = 23C
mV/V
TC of peak to peak output swing
TA = -40C
%/K
-1.25 -1.55 -1 -2 -4 0 0 0 0.05
Output offset voltage
TA = +160C HROT = 8 kA/m () no HROT TA = 23C
TC of output offset voltage Angular Inaccuracy Angular hysteresis Isolation Bridge Current
HROT = 8 kA/m() no HROT
+1 +2 +4 0.2 0.1 0.5 ()
mV/V
V/V/K deg deg deg A
0
0.1
NOTES: (*) Typical values apply to an ambient temperature of 23oC
() See point "Magnetic Field Tests" below
() The accurate control of this parameter (Limmax=0.1deg, HROT=25kA/m) takes place by means of sample tests
A:
Output characteristic definitions
VO1/VCC1 = (VOMAX1 - VOMIN1)/VCC1 or/ VO2/VCC2 = (VOMAX2 - VOMIN2)/VCC2 VOFF1/VCC1 = 1/2(VOMAX1 + VOMIN1)/VCC1 or/ VOFF2/VCC2 = 1/2(VOMAX2 + VOMIN2)/VCC2 H = MAX | LEFT TURN - RIGHT TURN | = MAX | o - | (max. angular difference between left and right turn) (max. angular difference between actual value oand measured angle, without offset error)
B: Temperature coefficient (TC) equations
T1 = -25C, T0 = +25C, T2 = +125C
VO VO (T2 ) - (T1) VCC VCC 1 x TCVO = x 100% VO T2 - T1 (T0 ) VCC
where
VO (Tn ) VCC
is the peak-peak output voltage at temperature Tn
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ZMT32
TCR B = R (T ) - R B (T1) 1 xB2 x 100% T2 - T1 R B (T0 )
VOFF( T 2) - VOFF( T1) (T2 - T1 )
where VOFF(Tn) is the output offset voltage at temperature Tn
where
RB(Tn) is the bridge resistance at temperature Tn
TCVOFF =
Magnetic field tests
For these tests a rotating magnetic field is generated and the output signals of both bridges are measured at four different field angles for right rotation as well as for left rotation. Using these measured output signals the diameter and the center coordinates of the best circle are calculated. They correspond to the output voltage range and the offset voltage. Furthermore the field angles for both rotation directions and angular hysteresis are calculated
V [measured angle] = = arctan O2 V O1
Method The data pairs are transformed onto a unit circle starting from their position in the data collection for determining direction information or angle information. It must be evaluated with four pair values (cos, sin) on a right rotation (magnetic field rotation) and four pair values (cos, sin) on a left rotation (magnetic field rotation).
The field rotation steps are: start in 180 position right rotation to 22.5 with measurement of sensor outputs right rotation to 67.5 with measurement of sensor outputs right rotation to 112.5 with measurement of sensor outputs right rotation to 157.5 with measurement of sensor outputs right rotation to 0 (360) , stop , reversal left rotation to 157.5 with measurement of sensor outputs left rotation to 112.5 with measurement of sensor outputs left rotation to 67.5 with measurement of sensor outputs left rotation to 22.5 with measurement of sensor outputs , end position General description of tests with external magnetic field.
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ZMT32
Operating principle
0
O
Hrot
GND1 8
GND2 7
+VO2 6
+VO1 5
1
= 0
Bridge 1
Bridge 2
1 -VO1
2 -VO2
3 VCC2
4 VCC1
When a common-magnetic field is applied through the ZMT32 the 2 internal magneto-resistive bridges are affected slightly differently due to their 45 rotation to one another. This 45 rotation enables the ZMT32 to determine angular position, of a rotating magnetic field.
-VO1 -VO2 Vcc2 Vcc1
1
GND1 GND2 +VO2 +VO1
When a rotating magnetic field is applied to the ZMT32 it will output 2 sinusoidal voltages that are: * * * * proportional to the field strength applied proportional to the supply voltage applied, rotating at twice the angular position 90 apart (as seen below).
By taking the arcTan of the ratio of VO2 to VO1 the angular position of the magnetic field can be determined. Characteristic output curves VO1, VO2
10
Cos 2
5
Output voltage (mV/V)
0
Sin 2
-5
-10
Sensor bridge 2 Sensor bridge 1
0 45 90 135 180 225 270 315 360
-15
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ZMT32
Typical characteristics
Accuracy variance with field strength
1.4%
VCC1=VCC2=+5V TA=23oC k=100
Angle accuracy
1.2% 1.0% 0.8% 0.6% 0.4% 0.2% 0.0% 0 10 20 30
40
50
HROT - Field strength (kA/m)
Output variance with magnetic field strength
Output voltage (mV/V)
25 20 15 10 5 0 0 10 20 30 40 50
VCC1=VCC2=+5V TA=23oC k=100
HROT - Field strength (kA/m)
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ZMT32
Typical characteristics
Output voltage versus temperature
35
MAX MIN
Output voltage (mV/V)
30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125
VCC1=VCC2=+5V TA=23oC k=100
150
175
Temperature (oC)
Bridge resistance versus temperature
Bridge resistance ()
6000 5000 4000 3000 2000 1000 0 -50 -25 0 25 50 75 100 125 150 175
MAX MIN
VCC1=VCC2=+5V TA=23oC k=100
Temperature (oC)
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Typical application
+VCC
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5
VOUT1 A D
tan
8
top view ZMT32T8 R1 COS R3 R4 R2
+
VOUT2
D A
p
R3
SIN
R1
-
8
4
R4
R2 result of angle measurement fixed 45 degree phase difference between outputs 1 and 2
1
GND
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ZMT32
ZMT32
Package outline - SM-8 Soldering footprint
2.8 0.110 6.8 0.268 4.6 0.181
mm inches 0.95 0.037 1.52 0.060
DIM Min. A A1 b c D E 0.02 0.24 6.3 3.3
Millimeters Max. 1.7 0.1 0.32 6.7 3.7 Typ. 0.7 Min. 0.0008 0.009 0.248 0.130
Inches Max. 0.067 0.004 0.013 0.264 0.145 Typ. 0.0275 -
DIM Min. e1 e2 He Lp 6.7 0.9 -
Millimeters Max. 7.3 15 Typ. 4.59 1.53 10 Min. 0.264 0.035 -
Inches Max. 0.287 15 Typ. 0.1807 0.0602 10
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZMT32
Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labelling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview" Future device intended for production at some point. Samples may be available "Active" Product status recommended for new designs "Last time buy (LTB)" Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs" Device is still in production to support existing designs and production "Obsolete" Production has been discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue" This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Zetex sales offices Europe Zetex GmbH Kustermann-Park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
(c) 2008 Published by Zetex Semiconductors plc
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